Electronically reconfigurable metal-on-silicon metamaterial
نویسندگان
چکیده
منابع مشابه
Electronically reconfigurable metal-on-silicon metamaterial
Yaroslav Urzhumov,1,* Jae Seung Lee,2 Talmage Tyler,1 Sulochana Dhar,1 Vinh Nguyen,1 Nan M. Jokerst,1 Paul Schmalenberg,2 and David R. Smith1 1Center for Metamaterials and Integrated Plasmonics, Duke University, Durham, North Carolina 27708, USA 2Toyota Research Institute of North America, Ann Arbor, Michigan 48105, USA (Received 13 April 2012; revised manuscript received 6 July 2012; published...
متن کاملFrequency Reconfigurable Epsilon Negative Metamaterial Antenna
Received Feb 15, 2017 Revised Apr 22, 2017 Accepted May 7, 2017 This paper proposes metamaterial (MTM) inspired frequency reconfigurable antenna based on thecircular electric field coupled (ELC) resonator. It is composed of circular shape ELC resonator with the radius size of 7 mm. By inserting two switches between the gaps at both side of the circular ELC resonator, it is possible to switch ON...
متن کاملReconfigurable Fishnet Metamaterial Using Pneumatic Actuation
The design, fabrication and measurement of a reconfigurable fishnet metamaterial based on a new method of tuning by changing unit cell geometry is reported. Retractable elements are added to the unit cell utilizing pneumatically actuated switching. It is shown that the pneumatic actuation approach can unite a number of metallic elements into a complex conducting structure. Experimental demonstr...
متن کاملReconfigurable Integrated Photonic Circuits on Silicon
ACKNOWLEGMENTS First and foremost, I would like to thank my advisor, Prof. Ali Adibi, for his support and guidance throughout my PhD years, and for giving me the chance to be a part of the Georgia Tech community. the past six years. for their kind efforts in reviewing the present dissertation, and for honoring me with their presence at my doctoral defense session. especially Devin Brown and Gar...
متن کاملMetal-oxide-silicon diodes on deuterium-implanted silicon substrate
Ion implantation was used to incorporate deuterium at the Si–SiO2 interface. Polycrystalline silicon gate metal-oxide-semiconductor diodes with 4 nm oxide grown on deuterium-implanted p-type ^100& silicon substrate were investigated. It was observed that deuterium implantation at a light dose of 1310/cm at 25 keV reduced oxide leakage current due to reduction in oxide charge and interface traps...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2012
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.86.075112